Angle sensor based on one-dimensional photonic crystal with defect

Abstract

The results of computer simulation of optical properties of one-dimensional (1D) photonic crystal with defect based on semiconductor-dielectric layers in near IR region are presented. During simulation the layers of silicon and silicon dioxide with optical thickness of 3λ/4, λ/4 and 10λ/4 were used. The influence of the angle of incident radiation on spectral position of defect transmission band was studied. It is shown that the sensitivity to the angle is in the range of 6-20 nm/deg and 1.7-5.5 dB/deg, depending on the geometry of sensor and on the measuring method. These make this type of photonic crystal promising for the use in angle sensors as sensitive element.