THE EFFECT OF SURFACE PASSIVATION OF GAAS-BASED CYLINDRICAL MESA STRUCTURES ON THEIR OPTICAL PROPERTIES

  • Иван Алексеевич Мельниченко Higher School of Economics National Research University
  • Наталья Владимировна Крыжановская Higher School of Economics National Research University
  • Константин Александрович Иванов Higher School of Economics National Research University
  • Алексей Михайлович Надточий Higher School of Economics National Research University
  • Иван Сергеевич Махов Higher School of Economics National Research University
  • Максим Геннадьевич Козодаев Moscow Institute of Physics and Technology (National Research University)
  • Роман Равилевич Хакимов
  • Андрей Михайлович Маркеев Moscow Institute of Physics and Technology (National Research University)
  • Александр Андреевич Воробьев Alferov National Research Academic University of the Russian Academy of Sciences
  • Алексей Михайлович Можаров Alferov National Research Academic University of the Russian Academy of Sciences
  • Юлия Александровна Гусева Ioffe Institute of Physics and Technology of the Russian Academy of Sciences
  • Алексей Игоревич Лихачев Ioffe Institute of Physics and Technology of the Russian Academy of Sciences
  • Евгений Сергеевич Колодезный ITMO University
  • Алексей Евгеньевич Жуков Higher School of Economics National Research University
Keywords: InGaAs, quantum well, surface passivation, atomic layer deposition

Abstract

The optical properties of GaAs-based cylindrical mesa-structures were studied before and after passivation using hydrogen plasma treatment followed by atomic layer deposition of an Al2O3 layer. The In0.2Ga0.8As/GaAs quantum well and the GaAs/AlAs superlattice were used as the light-emitting region of the mesa structures. The diameter of the mesas varied from 3 to 20 μm. The result of passivation was an 8-fold increase in the photoluminescence intensity of 9-μm-diameter mesa at room temperature, and time-resolved photoluminescence studies of such mesa structures demonstrated an increase in charge carrier lifetime from 0.13 to 0.9 ns.

Published
2023-09-27
Issue
Vol 131 No 8 (2023): Оптика и спектроскопия
Section
Статьи